| PART |
Description |
Maker |
| KFH2G16Q2M |
FLASH MEMOR
|
Samsung semiconductor
|
| TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位）的CMOS闪存
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY
32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
|
| K9F4G08U0M |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory 512M x 8 1克8位NAND闪存
|
Samsung Semiconductor Co., Ltd.
|
| K9F1208R0C |
64M x 8 Bits NAND Flash Memory
|
Samsung semiconductor
|
| K9E2G08U0M-Y K9E2G08U0M-F K9E2G08U0M-P K9E2G08U0M- |
256M x 8 Bits NAND Flash Memory
|
http://
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K521F12ACD-B060 |
1Gb (128M x8) NAND Flash 512Mb (32M x16) Mobile DDR SDRAM
|
Samsung
|
| EDD1216AATA-5 EDD1216AATA-5B-E EDD1216AATA-5C-E |
128M bits DDR SDRAM (8M words x 16 bits, DDR400)
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
| EDS1232CASE-1A-E EDS1232CASE-1AL-E |
ER 8C 7#16 1#12 PIN RECP LINE 4M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
128M bits SDRAM (4M words x 32 bits) 128兆位的SDRAM分字× 32位）
|
Elpida Memory, Inc.
|
| EDD1232AABH-7A-E EDD1232AABH EDD1232AABH-6B-E |
128M bits DDR SDRAM (4M words x 32 bits)
|
ELPIDA[Elpida Memory]
|
| EDS1232AATA-75L-E EDS1232AATA EDS1232AATA-60 EDS12 |
128M bits SDRAM (4M words x 32 bits)
|
ELPIDA[Elpida Memory]
|
| EBD11ED8ADFB-5C EBD11ED8ADFB-5 EBD11ED8ADFB-5B EBD |
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks)
|
ELPIDA MEMORY INC
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
